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MBE - Materials Division

publications

2011

S. Ambrosini, M. Fanetti, V. Grillo, A. Franciosi and S. Rubini,
Vapor-liquid-solid and vapor-solid growth of  self-catalysed GaAs nanowires 
AIP ADVANCES 1, 042142 (2011)
http://link.aip.org/link/?ADV/1/042142

J. Alvarez, J.-P. Kleider, R. Trotta, A. Polimeni,  M. Capizzi, F. Martelli and L. Mariucci and S. Rubini
Giant and reversible enhancement of the electrical resistance of GaAs1−xNx by hydrogen irradiation
Phys. Rev. B 84, 085331 (2011)

Fauzia Jabeen, Vincenzo Grillo, Faustino Martelli, and Silvia Rubini
InGaAs/GaAs Core–Shell Nanowires Grown by Molecular Beam Epitaxy
IEEE Journal On Selected Topics In Quantum Electronics, 17, 5607281 (2011)

L.Felisari , V.Grillo, F. Jabeen, S.Rubini, C.Menozzi, F.Rossi, and F.Martelli
Imaging with low-voltage scanning transmission electron microscopy:
a quantitative analysis
Ultramicroscopy 111,  1018–1028 (2011)

N. Balakrishnan, A. Patanè, O. Makarovsky, A. Polimeni and M. Capizzi, F. Martelli and S. Rubini
Laser writing of the electronic activity of N- and H-atoms in GaAs
Appl. Phys. Lett. 99, 021105 (2011)

Rinaldo Trotta , Antonio Polimeni , Faustino Martelli , Giorgio Pettinari , Mario Capizzi ,
Laura Felisari , Silvia Rubini , Marco Francardi , Annamaria Gerardino ,
Peter C. M. Christianen , and Jan C. Maan
Fabrication of Site-Controlled Quantum Dots by Spatially
Selective Incorporation of Hydrogen in Ga(AsN)/GaAs Heterostructures
Adv. Mater.  23, 2706–2710 (2011)

S. Ambrosini, M. Fanetti, V. Grillo, A. Franciosi and S. Rubini,
Self-catalyzed GaAs nanowire growth on Si-treated GaAs(100) substrates
J. Appl. Phys. 109, 094306 (2011)

F. Martelli, S. Rubini, F. Jabeen, L. Felisari and V. Grillo
On the growth of InAs nanowires by molecular beam epitaxy
J. Cryst. Growth 323, 297 (2011)

2010

F. Jabeen, S. Rubini, F. Martelli, A. Franciosi, A. Kolmakov, L. Gregotratti, M. Amati, A. Barinov, A. Goldoni and M. Kiskinova
Contactless monitoring of the diameter-dependent conductivity of GaAs nanowires
Nano Research 3, 706 (2010)

F. Jabeen, M. Piccin,  L. Felisari, V. VGrillo, G. Bais, S. Rubini, F. Martelli, F. D'Acapito,  M. Rovezzi, F. Boscherini
Mn-induced growth of InAs nanowires
J. Vac. Sci. Technol. B 28, 478 (2010)

L. Wen, F. Bekisli, M. Stavola, W. B. Fowler, R. Trotta,  A. Polimeni, M. Capizzi, S. Rubini,
F. Martelli
Detailed structure of the H-N-H center in GaAs_yN_1−y revealed by vibrational spectroscopy under uniaxial stress
Phys. Rev. B 81, 233201 (2010)

R. Trotta, L. Cavigli, L. Felisari, A. Polimeni, A. Vinattieri, M. Gurioli, M. Capizzi, F. Martelli,
 S. Rubini, L. Mariucci, M. Francardi, and A. Gerardino
Quantum confinement effects in hydrogen-intercalated GaAs_1−xN_x-GaAs_1−xN_x :H planar
heterostructures investigated by photoluminescence spectroscopy
Phys. Rev. B 81, 235327 (2010)

2009

N. Begum, A. S. Bhatti,  F. Jabeen, S. Rubini, and F. Martelli
Line shape analysis of Raman scattering from LO and SO phonons in III-V nanowires
Journ. Apl. Phys. 106, 114317 (2009)

F. Jabeen, S. Rubini and F. Martelli
Growth of III-V semiconductor nanowires by molecular beam epitaxy
Microelectronics Journal 40, 442 (2009)

R. Trotta, A. Polimeni, M. Capizzi, F. Martelli, S. Rubini, M. Francardi, A. Gerardino, and L. Mariucci
Light polarization control in strain-engineered GaAsN/GaAsN:H heterostructures
Appl. Phys. Lett. 94, 261905 (2009)

G. Ciatto, F. Boscherini, A. Amore Bonapasta, F. Filippone, A.  Polimeni, M. Capizzi, M. Berti, G. Bisognin, D. De Salvador, L. Floreano, F. Martelli, S. Rubini, L. Grenouillet
Local structure of nitrogen-hydrogen complexes in dilute nitrides
Phys. Rev.  B79, 165205 (2009)

2008

F. Jabeen,  S. Rubini, V. Grillo, L. Felisari and F. Martelli
Room temperature luminescent InGaAs/GaAs core-shell nanowires
Appl. Phys. Lett. 93, 083117 (2008)

L. Felisari, V. Grillo, F. Martelli, R. Trotta, A. Polimeni, M. Capizzi,  F. Jabeen,   and L. Mariucci
In-plane band gap modulation investigated by secondary electron imaging of GaAsN/GaAsN:H heterostructures
Appl. Phys. Lett. 93, 102116 (2008)

N. Begum, M. Piccin, F. Jabeen, G. Bais, S. Rubini, F. Martelli, and A. S. Bhatti
Structural characterization of GaAs and InAs nanowires by means of Raman spectroscopy 
Journ. Apl. Phys. 104, 104311 (2008)

N. Begum, A. S. Bhatti, M. Piccin,  G. Bais, F. Jabeen, S. Rubini, F. Martelli, and A. Franciosi
Raman scattering from GaAs nanowires grown by molecular beam epitaxy
Advanced Materials Research 31,  23  (2008)

R. Trotta, A. Polimeni, M. Capizzi, D. Giubertoni, M. Bersani, G. Bisognin, M. Berti, S. Rubini, F. Martelli, L. Mariucci, M. Francardi and A. Gerardino
Effect of hydrogen incorporation temperature in in plane-engineered GaAsN/GaAsN:H heterostructures
Appl. Phys. Lett. 92, 221901 (2008)

F. Jabeen, V. Grillo, S. Rubini and F. Martelli
Self-catalyzed growth of GaAs nanowires on Si by molecular beam
epitaxy
Nanotechnology 19 ,  275711 (2008)

G. Bisognin, D. De Salvador, E. Napolitani, M. Berti, A. Polimeni, 
M. Capizzi, S. Rubini, F. Martelli, and A. Franciosi
High-resolution X-ray diffraction in situ study of very small complexes:
The case of hydrogenated dilute nitrides 
Journal of Applied Crystallography 41 , 366 (2008)

A. Polimeni, G. Pettinari, R. Trotta, F. Masia, M. Felici, M. Capizzi, A. Lindsay, E. P. O'Reilly, T. Niebling, W. Stolz, P. J. Klar, F. Martelli, S. Rubini
Photoluminescence under magnetic field and hydrostatic pressure for probing the electronic properties of GaAsN 
Physica Status Solidi (A) 205, 107 (2008)

S. Kleekajai, F. Jiang, K. Colon, M. Stavola, W. B. Fowler, K. R. Martin, A. Polimeni, M. Capizzi, Y. G. Hong, H. P. Xin, C. W. Tu, G. Bais,  S. Rubini, F. Martelli
Vibrational properties of the H-N-H complex in dilute III-N-V alloys: Infrared spectroscopy and density functional theory
Physical Review B77 , 085213 (2008)

2007

Marina Berti, Gabriele Bisognin, Davide De Salvador, Enrico Napolitani,  Silvia Vangelista, Antonio Polimeni, Mario Capizzi, Federico Boscherini, Gianluca Ciatto,  Silvia Rubini, Faustino Martelli, and Alfonso Franciosi
Formation and dissolution of D-N complexes in dilute nitrides
Phys. Rev. B 76, 205323 (2007)

G. Bisognin, D. De Salvador, E. Napolitani, M. Berti, A. Polimeni, M. Felici,
M. Capizzi, G. Bais, F. Jabeen, M. Piccin, S. Rubini, F. Martelli, and A. Franciosi
Thermal evolution of small N–D complexes in deuterated dilute nitrides revealed by in-situ high resolution X-ray diffraction
phys. stat. sol. (a) 204, 2766 (2007) 

F. Martelli, , M. Piccin, G. Bais, F. Jabeen, S. Ambrosini,  S. Rubini and A. Franciosi
Photoluminescence of Mn-catalyzed GaAs nanowires grown by molecular beam epitaxy
Nanotechnology, 18, 125603 (2007).

M. Geddo, T. Ciabattoni, G. Guizzetti, M. Galli, M. Patrini,  A. Polimeni,  R. Trotta, M. Capizzi, G. Bais, M. Piccin, S. Rubini, F. Martelli, and A. Franciosi.
Photoreflectance and Reflectance investigation of  deuterium irradiated
GaAsN,
Appl. Phys. Lett. 90, 091907 (2007).

S. Rubini, M. Piccin, G. Bais, F. Jabeen, F. Martelli and A. Franciosi
GaAs nanowires by Mn-catalysed molecular beam epitaxy
Journal of Physics: Conference Series 61,  992 (2007)

M. Piccin, G. Bais, V. Grillo, F. Jabeen, S. De Franceschi, E. Carlino, M. Lazzarino, F. Romanato, L. Businaro, S. Rubini , F. Martelli and A. Franciosi

Growth by molecular beam epitaxy and electrical characterization of GaAs nanowires

Physica E 37, 134 (2007).

2006

G. Pettinari, F. Masia,A. Polimeni, M. Felici, A. Frova, M. Capizzi, A. Lindsay, E. P. O'Reilly, P. J. Klar, W. Stolz, G. Bais, M. Piccin, S. Rubini, F. Martelli, and A. Franciosi.
Influence of nitrogen-cluster states on the gyromagnetic factor of electrons in GaAs_1-xN_x,,
Phys. Rev. B, 74, 245202 (2006).

F. Martelli, S. Rubini, M. Piccin, G. Bais, F. Jabeen, S. De Franceschi, V. Grillo, E. Carlino, F. D'Acapito, F. Boscherini, S. Cabrini, M. Lazzarino, L. Businaro, F. Romanato and A. Franciosi
Mn induced growth of GaAs nanowires
Nano Letters, 6, 2130 (2006).

M. Felici, A. Polimeni, G. Salviati, L. Lazzarini, N. Armani, F. Masia, M. Capizzi, F.  Martelli, M. Lazzarino, G. Bais, M. Piccin, S. Rubini and A. Franciosi
In-plane band gap engineering by modulated hydrogenation of dilute
nitride semiconductors
Adv. Mater. 18, 1993 (2006).

F. Masia, G. Pettinari, A. Polimeni, M. Felici, A. Miriametro, M. Capizzi, A. Lindsay, S. B. Healy, E. P. O'Reilly, A. Cristofoli, G. Bais, M. Piccin, S. Rubini, F. Martelli, A. Franciosi, P. J. Klar, K. Volz, and W. Stolz
Interaction between conduction band edge and nitrogen states probed by carrier effective mass measurements in GaAs_1-xN_x,,
Phys. Rev. B, 73, 077201 (2006).

F. D'Acapito,  G. Smolentsev,  F. Boscherini, M. Piccin, G. Bais, S. Rubini, F. Martelli, A. Franciosi
Site of Mn in Mn δ-doped GaAs: X-ray absorption spectroscopy
Phys. Rev. B, 73, 035314 (2006).

E. Pelucchi, D. Kumar, M. Lazzarino, S. Rubini and A. Franciosi
Controlling interface reactivity and Schottky barrier  height in Au/ZnSe (001) junctions
J. Vac. Sci. Technol. B 24, 1259 (2006).

S. Rubini, G. Bais, A. Cristofoli, M. Piccin, R. Duca,  C. Nacci,  S. Modesti, E. Carlino , F. Martelli and A. Franciosi
Nitrogen induced hindering of In incorporation in InGaAsN
Appl. Phys. Lett. 88, 141923 (2006).

E. Carlino , F. Martelli S. Rubini and A. Franciosi
Catalyst incorporation in ZnSe nanowires
Phil. Mag. Lett.  86, 261 (2006).

G. Bisognin, D. De Salvador , A.V. Drigo, E. Napolitani, A. Sambo, M. Berti , A. Polimeni, M. Felici, M. Capizzi, M. Güngerich, P.J. Klar, G. Bais, F. Jabeen, M. Piccin, S. Rubini, F. Martelli, and A. Franciosi
Hydrogen-nitrogen complexes in dilute nitride alloys: origin of the compressive lattice strain
Appl. Phys. Lett. 89, 061904 (2006).

M C Frassanito, Giorgi M De, R Rinaldi, R Cingolani, S Rubini, M Piccin, A Cristofoli, G Bais, F Martelli, E Carlino and A Franciosi
Microphotoluminescence characterization of alloy fluctuations in InGaAsN/GaAs quantum wells emitting at 1.3μm
Semic. Sci. Technol. 21, 1207 (2006)

2005 

D. Orani, M. Piccin, S. Rubini, E. Pelucchi, B. Bonanni, A. Franciosi, A. Passasseo, R. Cingolani and A. Khan
Epitaxial Al/GaN and Au/GaN Junctions on as-grown GaN(0001)1x1 Surfaces
Physica Status Solidi(a) 202, 804 (2005).

A. Colli, S. Hofmann, A. C. Ferrari, C. Ducati, F. Martelli, S. Rubini, S. Cabrini, A. Franciosi, J. Robertson
Low-temperature synthesis of ZnSe nanowires and nanosaws by catalyst-assisted molecular beam epitaxy
Appl. Phys. Lett. 86, 153103 (2005).

A. Colli, S. Hoffman, A.C. Ferrari, F. Martelli, S. Rubini, C. Ducati, A. Franciosi and J. Robertson
Selective growth of ZnSe and ZnCdSe nanowires by molecular beam epitaxy
Nanotecnology 16, S139 (2005).

G. Bais, A. Cristofoli, F. Jabeen, M. Piccin, E. Carlino, S. Rubini, F. Martelli and A. Franciosi
InAsN/GaAs(N) quantum dots and InGaAsN/GaAs quantum well emitters: a comparison
Appl. Phys. Lett. 86, 233107 (2005)

R. Duca, G. Ceballos, C. Nacci, D. Furlanetto, P. Finetti, S. Modesti, A. Cristofoli,  G. Bais, M. Piccin, S. Rubini, F. Martelli and A. Franciosi 
In-N and N-N correlation in InGaAsN quantum wells,
Phys. Rev. B 72, 075311 (2005)

2004

E. Pelucchi, S. Rubini, B. Bonanni, A. Franciosi, A. Zaui, M. Peressi, A. Baldereschi, D. De Salvador, M. Berti, A. Drigo, F. Romanato
Structural and electronic properties of wide band gap Zn1-xMgxSe alloys
J. Appl. Phys. 95, 4184 (2004).

S. Modesti, R. Duca, P. Finetti, G. Ceballos, M. Piccin, S. Rubini and A. Franciosi.
Microscopic Mechanisms of Self-Compensation in Si d-doped GaAs
Phys. Rev. Lett. 92, 086104-1 (2004).

A. Colli, E. Carlino, E. Pelucchi , V. Grillo and A. Franciosi
Local interface composition and native stacking fault density in ZnSe/GaAs(001) heterostructures
J. Appl. Phys. 96, 2592 (2004).

2003

S. Modesti, D. Furlanetto, M. Piccin, S. Rubini and A. Franciosi
High resolution potential mapping in semiconductor nanostructures by cross-sectional scanning tunneling microscopy and spectroscopy
Appl. Phys. Lett 82, 2592 (2003).

A. Colli, E. Pelucchi and A. Franciosi
Controlling the native stacking fault density in II-VI/III-V heterostructures
Appl. Phys. Lett 83, 81 (2003).

E. Carlino, S. Modesti, D. Furlanetto, M. Piccin, S. Rubini and A. Franciosi
Atomic resolution composition analysis by scanning transmission electron microscopy high-angle annulas dark-field imaging
Appl. Phys. Lett 83, 662 (2003).

E. Carlino, D. Furlanetto, A. Colli and A. Franciosi
High spatial resolution TEM studies of ZnSe/GaAs (001) interfaces grown by different MBE procedures
MICROSCOPY OF SEMICONDUCTING MATERIALS 2003, INSTITUTE OF PHYSICS CONFERENCE SERIES 180, 183 (2003).

2002

F. Barbo, M. Bertolo, A. Bianco, G. Cautero, S. Fontana, T. K. Johal, S. La Rosa, R. C. Purandare, N. Svetchnikov, A. Franciosi, D. Orani, M. Piccin, S. Rubini, R. Cimino
Cross sectional studies of buried semiconductor interfaces by means of photoemission microscopy
Appl. Phys. Lett 80, 2511 (2002).

F. Boscherini, N. Ferretti, B. Bonanni, D. Orani, S. Rubini, M. Piccin and A. Franciosi
Silicon Clustering in Si-GaAs d-doped layers and superlattices
Appl. Phys. Lett 81, 1639 (2002).

2001

B. Bonanni, E. Pelucchi, S. Rubini, D. Orani, A. Franciosi, A. Garulli and A. Parisini
Excitonic properties and band alignment in lattice-matched ZnCsdSe/ZnMgSe multiple-quantu- well structure
Appl. Phys. Lett 78, 434 (2001).

E. Pelucchi, S. Rubini, B. Bonanni, A. Franciosi, and M. Peressi
Band discontinuities in ZnCsdSe/ZnMgSe lattice-matched heterostructures
Appl. Phys. Lett 78, 1574 (2001).

S. Rubini, E. Milocco, L. Sorba, E. Pelucchi, A. Franciosi, A. Garulli, A. Parisini, Y. Zhuang and G. Bauer
Structural and electronic properties of ZnSe/AlAs heterostructures
Phys. Rev. B63, 155312 (2001).

F. Giazzotto, M. Cecchini, P. Pingue, F. Beltram, M Lazzarino, D. Orani, S. Rubini and A. Franciosi
Reflectionless tunneling in planar Nb/GaAs hybrid junctions
Appl. Phys. Lett 78, 1772 (2001).

S. Rubini, E. Pelucchi, M. Lazzarino, D. Kumar, A. Franciosi, C. Berthod, N. Binggeli and A. Baldereschi
Ideal unreactive metal semiconductor interface: the case of Zn/ZnSe(001)
Phys. Rev. B63, 235307 (2001).

F. Giazzotto, P. Pingue, F. Beltram, M Lazzarino, D. Orani, S. Rubini and A. Franciosi
Resonant transport in Nb/GaAs/AlGaAs Heterostructures: Realization of the de Gennes-Saint James Model
Phys. Rev. Lett 87, 216808-1 (2001).

B. Bonanni, D. Orani, M. Lazzarino, S. Rubini, A. Franciosi
Metal III-V diodes engineered by means of Si interlayers: Interface reactions versus local interface dipoles
Appl. Phys. Lett 79, 1462 (2001).

rubini@TASCdomain - Last modified: May 29, 2008